Li Zhijian (1928- ) is a native of Ningbo, Zhejiang Province. He is a microelectronics technical scientist. He graduated from Physics Department, Zhejiang University in 1951 and obtained an assistant doctorate degree from Leningrad University in physics and mathematics in 1958. Li has served as a professor and dean of Tsinghua University. He was elected as academician of Chinese Academy of Sciences in 1991 and Third World Academy of Sciences in 1999.

Li was engaged in research of semiconductor membrane photoconduction and photoelectricity mechanism. He put forward the electronic grain boundary, based on which he developed a high SNR PbS infrared detector in the early 1950s. In 1959, he developed high pure polysilicon and in the 1960s he engaged in silicon component research. Li's achievements in plane silicon technology and converse piezosilicon high frequency audion promoted related research and production in the country. After 1977, he was mainly devoted to the research of large-scale and very-large-scale integrated technology and component physics. He successfully led, directed and directly participated in the R&D of very-large-scale integrated circuit chips, such as multiple types of SRAM, 8 bit and 16 bit microprocessors, and EEPROM and 1M Chinese characters ROM, which gained great success. He invented "very-large-scale Integrated circuit (VLSI) transient heat treatment technology and device" in 1980s, which won National Invention Prize, Second Class. Concurrently, Li developed 3 micron and 1 micron set technology and techniques. He also invented semiconductor high-speed annealing techniques and equipment. His recent research includes system chip integration and microelectronic machine techniques. His microelectronic technique and state-level key project in integrated circuit won Science and Technology Progress Award, First Class for three times, awarded by State Education Commission and Electronic Ministry; his 3-micron LSI set technique and integrated circuit study won State Science and Technology Advancement Award, Second Class of 1987; his "1-1.5 micron VLSI CMOS technique and 1M Chinese character ROM" won State Science and Technology Progress Award, Second Class in 1995. He published almost 30 pieces of theses on system integration technology in publications both at home and abroad, and applied for several patents of invention in U.S., 6 of which were approved.